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FACILITIES
The different research activities performed inside MATIS are based upon a wide set of facilities, spread over a surface of about 1000 square meters, which allows to create, modify and characterize several materials. Such techniques are briefly overviewed in the following, distinguishing growth, processing and characterization techniques.




 GROWTH AND PROCESSING
  • Molecular Beam Epitaxy (MBE) Laboratory:
    compatible with 150 mm wafer, equipped with Si, Ge, C, B, Sb, As sources with in situ RHEED, XPS, Auger and UPS

  • Cluster Deposition Laboratory

  • Ion Beam Assisted Deposition system

  • UHV Confocal Magnetron Sputtering:
    compatible with 200 mm wafer with 3 confocal sources for cosputtering

  • Lasers, furnaces, rapid thermal annealer

  • 400 kV HVEE Ion Implanter



    •  CHARACTERIZATION
  • 3.5 MV HVEE Singletron Accelerator System:
    RBS, channeling, ERDA, PIXE, NRA

  • 30 KV field emission Scanning Electron Microscope:
    equipped with EDX and STEM

  • Secondary Ions Mass Spectrometry:
    equipped for analyses of insulators, low energy beams, and analyses at low temperatures

  • Optical characterization laboratory:
    PL, PLE, Time resolved and temperature dependent measurements, EL

  • Electrical characterization laboratory:
    Hall, I-V, C-V, DLTS

  • Micro-Raman spectroscopy

  • Scanning Tunneling Microscopy

  • Atomic Force Microscopy

  • High resolution and glazing angle X-ray diffractometer

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